Heterojunction bipolar transistor having a germanium raised extrinsic base
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United States of America Patent
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Dec 8, 2015
Grant Date -
Sep 18, 2014
app pub date -
Feb 7, 2014
filing date -
Mar 12, 2013
priority date (Note) -
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Abstract
Disclosed is a heterojunction bipolar transistor (“HBT”) including an intrinsic base in a SiGe layer. The HBT has a raised germanium extrinsic base over the SiGe layer. A base contact is situated over and contacting the raised germanium extrinsic base. An emitter is situated over the intrinsic base, and a collector is situated under the intrinsic base. The raised germanium extrinsic base has a reduced parasitic base-collector capacitance. The raised germanium extrinsic base is situated between a first dielectric layer and a second dielectric layer. Spacers are situated adjacent the second dielectric layer. The first dielectric layer can be a nitride based dielectric, the second dielectric layer can be an oxide based dielectric, and the spacers can be a nitride based dielectric.
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