Chemical vapor deposition method

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United States of America Patent

PATENT NO 9212420
APP PUB NO 20100247803A1
SERIAL NO

12730088

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Abstract

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A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED;VERSUM MATERIALS US, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Osayuki Rensselaer, US 6 29
Faguet, Jacques Albany, US 51 3319
Hurley, Patrick Timothy Allentown, US 4 48
Lee, Eric M Austin, US 34 2862
Matsumoto, Takashi Tokyo, JP 563 7209
O'Neill, Mark Leonard San Marcos, US 108 9262
Vrtis, Raymond Nicholas Orefield, US 73 4930

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