Source and body contact structure for trench-DMOS devices using polysilicon
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United States of America Patent
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Dec 15, 2015
Grant Date -
Aug 14, 2014
app pub date -
Apr 18, 2014
filing date -
Mar 31, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a oxide disposed on top of the source region and the gate electrode, and a doped polysilicon spacer disposed along a sidewall of the source region and a sidewall of the oxide. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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