Wavelength sensitive sensor photodiodes
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United States of America Patent
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Dec 15, 2015
Grant Date -
Oct 30, 2014
app pub date -
Feb 11, 2014
filing date -
Jan 19, 2010
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Abstract
The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.
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