Defect reduction in electrodeposited copper for semiconductor applications
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United States of America Patent
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Dec 29, 2015
Grant Date -
May 29, 2008
app pub date -
Jan 8, 2008
filing date -
Mar 5, 2002
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Abstract
A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.
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