System for maintaining back gate threshold voltage in three dimensional NAND memory

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United States of America Patent

PATENT NO 9230656
APP PUB NO 20150003161A1
SERIAL NO

13927659

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Abstract

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In a nonvolatile memory array in which a NAND string includes a back gate that has a charge storage element, the threshold voltage of the back gate is monitored, and if the threshold voltage deviates from a desired threshold voltage range, charge is added to, or removed from the charge storage element to return the threshold voltage to the desired threshold voltage range.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avila, Chris Nga Yee Saratoga, US 30 773
Chen, Jian Menlo Park, US 1535 22430
Dong, Yingda San Jose, US 252 4810
Dusija, Gautam Ashok Milpitas, US 21 630
Lee, Seungpil San Ramon, US 66 1237
Mak, Alexander Kwok-Tung Los Altos Hills, US 20 393
Mui, Man Lung Fremont, US 52 752

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