Non-volatile memory device and method of manufacturing the same
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United States of America Patent
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Feb 9, 2016
Grant Date -
Jul 31, 2014
app pub date -
Jul 19, 2013
filing date -
Jul 19, 2013
priority date (Note) -
Withdrawn
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Abstract
According to one embodiment, there are provided a memory cell forming region, a first wiring hookup region in which first wirings extending in a first direction are formed by being drawn outside of the memory cell forming region, a second wiring hookup region which is disposed in a layer above the first wirings and in which second wirings extending in a second direction are formed by being drawn outside of the memory cell forming region, and a first dummy wiring connected to each of the second wirings. The first dummy wiring is disposed so that a sum of the area of the second wiring and the area of the first dummy wiring becomes the same in the respective second wirings.
First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
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Patent Owner(s)
- KABUSHIKI KAISHA TOSHIBA
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Okajima, Mutsumi | Mie, JP | 49 | 168 |
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