Non-volatile memory device and method of manufacturing the same

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United States of America Patent

PATENT NO 9231028
APP PUB NO 20140209846A1
SERIAL NO

13946502

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Abstract

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According to one embodiment, there are provided a memory cell forming region, a first wiring hookup region in which first wirings extending in a first direction are formed by being drawn outside of the memory cell forming region, a second wiring hookup region which is disposed in a layer above the first wirings and in which second wirings extending in a second direction are formed by being drawn outside of the memory cell forming region, and a first dummy wiring connected to each of the second wirings. The first dummy wiring is disposed so that a sum of the area of the second wiring and the area of the first dummy wiring becomes the same in the respective second wirings.

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First Claim

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okajima, Mutsumi Mie, JP 49 168

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