Large-mesh cell-projection electron-beam lithography method
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United States of America Patent
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Jan 12, 2016
Grant Date -
Aug 8, 2013
app pub date -
Apr 13, 2011
filing date -
Apr 15, 2010
priority date (Note) -
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status (Latency Note)
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Abstract
A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.
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International Classification(s)
- G21G:CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURC....
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- B82Y:SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; ....
- G03C:PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES....
- G03B:APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS O....
- G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....
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