Voltage kick to non-selected word line during programming
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United States of America Patent
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Jan 12, 2016
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N/A
app pub date -
Feb 2, 2015
filing date -
Feb 2, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
When applying a programming voltage at one end of a word line of a non-volatile memory circuit, if the word line has a large RC constant the far end of the word line will not rise as fast as the driven end, which can adversely affect device performance. To more quickly raise the voltage on the selected word line, a voltage kick is applied to non-selected word lines, such as dummy word lines, by way of a non-selected sub-block of the selected block. The channel of NAND strings in the non-selected sub-block is used to transfer the kick to the far end of the selected word line of the selected sub-block.
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