Frequency enhanced impedance dependent power control for multi-frequency RF pulsing
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United States of America Patent
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Jan 12, 2016
Grant Date -
Jul 30, 2015
app pub date -
Apr 3, 2015
filing date -
Feb 22, 2012
priority date (Note) -
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Abstract
Methods for processing a substrate in a plasma processing chamber employing a plurality of RF power supplies. The method includes pulsing at a first pulsing frequency a first RF power supply to deliver a first RF signal between a high power state and a low power state. The method further includes switching the RF frequency of a second RF signal output by a second RF power supply between a first predefined RF frequency and a second RF frequency responsive to values of a measurable chamber parameter. The first RF frequency and the second RF frequencies and the thresholds for switching were learned in advance during a learning phase while the first RF signal pulses between the high power state and low power state at a second RF frequency lower than the first RF frequency and while the second RF power supply operates in different modes.
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