Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9236387
APP PUB NO 20140167125A1
SERIAL NO

14186369

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Abstract

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A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face.

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Patent Owner(s)

  • ELPIDA MEMORY, INC.;LONGITUDE SEMICONDUCTOR S.A.R.L.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mori, Kazuto Tokyo, JP 9 22
Okonogi, Kensuke Tokyo, JP 38 335
Oyu, Kiyonori Tokyo, JP 67 568

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