Manufacturing method of solid-state imaging apparatus
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United States of America Patent
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Jan 12, 2016
Grant Date -
Jul 17, 2014
app pub date -
Jan 6, 2014
filing date -
Jan 16, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A color filter 5 is formed above a semiconductor substrate SB, in an area above a predetermined light receiving portion among a plurality of light receiving portions 1. A sacrificial layer 8 is formed on upper and side of the first color filter 5. Color filters 6 and 7 are formed above the semiconductor substrate SB, in areas above other light receiving portions adjacent to the predetermined light receiving portion, to expose at least part of the upper surface area of the first color filter 5 on the sacrificial layer 8. The sacrificial layer 8 is etched to remove the upper and side areas of the color filter 5 on the sacrificial layer 8 to form hollow portions 9 between the color filter 5 and the color filter 6 and between the color filter 5 and the color filter 7.
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