Fabrication of MOS device with schottky barrier controlling layer
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United States of America Patent
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Jan 12, 2016
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app pub date -
Jun 10, 2014
filing date -
Feb 11, 2005
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Abstract
Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench; and disposing a contact electrode within the active region contact trench. The Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain.
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