Non-volatile semiconductor storage device
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United States of America Patent
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Jan 19, 2016
Grant Date -
Sep 10, 2015
app pub date -
Sep 19, 2014
filing date -
Mar 6, 2014
priority date (Note) -
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Abstract
A non-volatile semiconductor storage device according to each of the embodiments includes a cell array that includes a plurality of first wires extending in a first direction, a plurality of second wires extending in a second direction crossing the first direction, and a plurality of memory cells each provided at an intersection between each of the first wires and each of the second wires. Each memory cell includes a variable resistance film of which resistance varies depending on a state of a filament in a medium. Each cell array has a first portion at which a distance between the first wire and the second wire is minimized and a second portion at which a distance between the first wire and the second wire is larger than the first portion at the intersection between each of the first wires and each of the second wires.
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