Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants
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United States of America Patent
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Jan 19, 2016
Grant Date -
Oct 10, 2013
app pub date -
Dec 9, 2011
filing date -
Dec 9, 2011
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Abstract
A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.
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