Drift acceleration in resistance variable memory

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United States of America Patent

PATENT NO 9245620
SERIAL NO

14750525

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Abstract

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The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calderoni, Alessandro Boise, US 35 237
Fantini, Paolo Vimercate, IT 96 386
Ferro, Massimo Camisano, IT 18 113

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