Semiconductor constructions having grooves dividing active regions
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United States of America Patent
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Jan 26, 2016
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N/A
app pub date -
Nov 19, 2014
filing date -
Nov 19, 2014
priority date (Note) -
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Abstract
Some embodiments include semiconductor constructions having an active region surrounded by insulating material. A groove crosses the active region to divide the active region into first and second portions. A conductive wordline material is within the groove. First and second diffusion regions are within the first portion of the active region, and vertically arranged to sandwich a part of the first portion therebetween. Third and fourth diffusion regions are within the second portion of the active region, and are vertically arranged to sandwich a part of the second portion therebetween. First and second conductive regions are in electrical contact with the first and second diffusion regions, respectively. Third and fourth conductive regions are in an electrical contact with the third and fourth diffusion regions, respectively.
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