SHAPING RERAM CONDUCTIVE FILAMENTS BY CONTROLLING GRAIN-BOUNDARY DENSITY
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United States of America Patent
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Jan 26, 2016
Grant Date -
Jan 28, 2016
app pub date -
Jul 23, 2014
filing date -
Jul 23, 2014
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Abstract
Filament size and shape in a ReRAM stack can be controlled by doping layers of a variable-resistance stack to change the crystallization temperature. This changes the density of the grain boundaries that form during annealing and provide minimal-resistance paths for the migration of charged defects. Hf, Zr, or Ti decreases the crystallization temperature and narrows the filament, while Si or N increases the crystallization temperature and widens the filament. Tapered filaments are of interest: The narrow tip requires little energy to break and re-form, enabling the cell to operate at low power, yet the wider body and base are insensitive to entropic behavior of small numbers of defects, enabling the cell to retain data for long periods.
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