Forming memory using high power impulse magnetron sputtering

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United States of America Patent

PATENT NO 9249498
APP PUB NO 20110315543A1
SERIAL NO

12825091

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Abstract

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Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Yongjun Jeff Boise, US 163 1136
McTeer, Everett A Eagle, US 46 130
Sandhu, Gurtej S Boise, US 1216 32355
Smythe,, III John A Boise, US 35 283

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