Method for top oxide rounding with protection of patterned features

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United States of America Patent

PATENT NO 9252051
SERIAL NO

14540367

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Abstract

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After completely etching through a material stack comprising an oxide hard mask layer and an underlying interlevel dielectric (ILD) layer formed on a substrate to provide at least one opening, top corners of the at least one opening are rounded by performing a plasma etch employing a combination of an etching gas and a deposition gas comprising a hydrofluorocarbon compound. The hydrofluorocarbon compound forms a hydrofluorocarbon polymer layer on sidewalls of the at least one opening and helps to preserve the profile of the at least one opening.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Joe Albany, US 46 356
Mignot, Yann Slingerlands, US 119 279
Trickett, Douglas M Altamont, US 19 723

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