Self-aligned contact structure
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United States of America Patent
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Feb 2, 2016
Grant Date -
Jul 16, 2015
app pub date -
Jan 16, 2014
filing date -
Jan 16, 2014
priority date (Note) -
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Abstract
Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a semiconductor structure having a first metal layer and a plurality of dielectric layers on top of the first metal layer; creating one or more openings through the plurality of dielectric layers to expose the first metal layer underneath the plurality of dielectric layers; causing the one or more openings to expand downward into the first metal layer and expand horizontally into areas underneath the plurality of dielectric layers; applying a layer of lining material in lining sidewalls of the one or more openings inside the plurality of dielectric layers; and filling the expanded one or more openings with a conductive material.
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