Substrate dividing method

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United States of America Patent

PATENT NO 9252056
APP PUB NO 20150311119A1
SERIAL NO

14793181

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Abstract

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A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

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Patent Owner(s)

  • HAMAMATSU PHOTONICS K.K.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Yoshimaro Hamamatsu, JP 31 684
Fukumitsu, Kenshi Hamamatsu, JP 86 5534
Fukuyo, Fumitsugu Hamamatsu, JP 73 4496
Uchiyama, Naoki Hamamatsu, JP 147 11875

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