III-nitride semiconductor device with reduced electric field between gate and drain

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United States of America Patent

PATENT NO 9252257
SERIAL NO

14332589

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Abstract

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A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AMERICAS CORP.;INTERNATIONAL RECTIFIER CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Briere, Michael A Scottsdale, US 133 1630

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