Silicon on germanium

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United States of America Patent

PATENT NO 9252281
APP PUB NO 20140264555A1
SERIAL NO

14289187

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Abstract

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A monolayer or partial monolayer sequencing processing, such as atomic layer deposition (ALD), can be used to form a semiconductor structure of a silicon film on a germanium substrate. Such structures may be useful in high performance electronic devices. A structure may be formed by deposition of a thin silicon layer on a germanium substrate surface, forming a hafnium oxide dielectric layer, and forming a tantalum nitride electrode. The properties of the dielectric may be varied by replacing the hafnium oxide with another dielectric such as zirconium oxide or titanium oxide.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Kie Y Chappaqua, US 652 41369
Forbes, Leonard Corvallis, US 1219 61325

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