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Abstract

Methods for depositing a kesterite film comprising a compound of the formula:

description='In-line Formulae' end='lead'Cu_2−xZn_1+ySn(S_1−zSe_z)_4+q,description='In-line Formulae' end='tail'

wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1, generally include contacting a hydrazine-based solvent, a source of Cu, a source of Sn, a source of Zn carboxylate, a source of at least one of S and Se, under conditions sufficient to form a solution substantially free of solid particles; applying the solution onto a substrate to form a thin layer; and annealing the thin layer at a temperature, pressure, and length of time sufficient to form the kesterite film. Also disclosed are hydrazine-based precursor solutions for forming a kesterite film and a photovoltaic device including the kesterite film formed by the above method.

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First Claim