High voltage driver using medium voltage devices

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United States of America Patent

PATENT NO 9252651
APP PUB NO 20130002149A1
SERIAL NO

13528324

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Abstract

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A voltage drive circuit is constructed by stacking NMOS and PMOS transistors to provide high voltage levels with an output voltage swing greater than the breakdown voltage of the individual transistors used to build the voltage drive circuit. The voltage drive circuit may include a series stack of capacitors connected between gates of the stacked PMOS and NMOS transistors. The capacitive loading causes the gate signals to change more synchronously. Errors in timing for these gate signals, which would otherwise result in damage from exceeding the breakdown voltage across a pair of terminals of one of the NMOS and PMOS transistors, are mollified.

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Patent Owner(s)

  • SYNAPTICS INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Knausz, Imre Rochester, US 29 330
Mott, Brian Rochester, US 3 39

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