Low crosstalk, front-side illuminated, back-side contact photodiode array
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United States of America Patent
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Mar 1, 2016
Grant Date -
May 3, 2012
app pub date -
Sep 29, 2011
filing date -
Jun 5, 2006
priority date (Note) -
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Abstract
The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode includes a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+region through the wafer and a diffusion of an n+region through the wafer.
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