Conductive barriers for ternary nitride thin-film resistors
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United States of America Patent
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Mar 1, 2016
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Dec 4, 2014
filing date -
Dec 4, 2014
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Abstract
In a thin-film resistor stack (e.g. A ReRAM embedded resistor), a metallic barrier layer 1-5 nm thick protects an underlying or overlying ternary metal nitride layer from unwanted oxidation while having negligible effect on the resistance or height of the stack. For devices subjected to temperatures over 650 C after forming the stack, the metallic barrier layer may be iridium or ruthenium. For devices with temperatures kept below 650 C after forming the stack, the metallic barrier layer may be Al. The metallic barrier layer(s) and the ternary nitride layer may be formed in situ, for example by sputtering or atomic layer deposition.
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