Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal

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United States of America Patent

PATENT NO 9281180
APP PUB NO 20130130477A1
SERIAL NO

13697218

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Abstract

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According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY3-8-1 HARUMI-CHO FUCHU-SHI TOKYO 183-8538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koukitu, Akinori Tokyo, JP 38 242
Kumagai, Yoshinao Tokyo, JP 28 183

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