HYBRID WAFER DICING APPROACH USING AN ADAPTIVE OPTICS-CONTROLLED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS
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United States of America Patent
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Mar 8, 2016
Grant Date -
Mar 24, 2016
app pub date -
Sep 18, 2014
filing date -
Sep 18, 2014
priority date (Note) -
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an adaptive optics-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
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