Method for etching semiconductor structures and etching composition for use in such a method

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United States of America Patent

PATENT NO 9287228
APP PUB NO 20150380370A1
SERIAL NO

14316558

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Abstract

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A method of etching a semiconductor structure, comprises contacting an under bump metallization (UBM) with an etching composition. The UBM includes an underlying layer comprising titanium and an overlying layer comprising a second metal. The etching composition is a liquid comprising at least 0.1 wt % hydrofluoric acid and at least 0.1 wt % phosphoric acid.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH AGSEZ-STRASSE 1 9500 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kraus, Harald Hof, DE 49 177
Schier, Hebert Landskron, AT 1 11

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