Thin film transistor and method for fabricating thin film transistor
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United States of America Patent
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Mar 22, 2016
Grant Date -
Jan 1, 2015
app pub date -
Dec 20, 2012
filing date -
Dec 22, 2011
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Abstract
An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).
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