Conductive interconnect structures and formation methods using supercritical fluids
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United States of America Patent
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Mar 22, 2016
Grant Date -
Dec 22, 2011
app pub date -
Aug 29, 2011
filing date -
Jun 28, 2005
priority date (Note) -
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Abstract
Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns or more. The method can further include disposing a conductive material in the via while the via is exposed to a supercritical fluid. For example, copper can be disposed in the via by introducing a copper-containing precursor into the supercritical fluid and precipitating the copper from the supercritical fluid. Interconnect structures can be formed using this technique in a single generally continuous process, and can produce conductive structures having a generally uniform grain structure across the width of the via.
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