Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant
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United States of America Patent
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Mar 22, 2016
Grant Date -
Jan 1, 2015
app pub date -
Dec 9, 2013
filing date -
Jun 27, 2013
priority date (Note) -
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Abstract
An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
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