Mask for performing pattern exposure using reflected light
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United States of America Patent
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Mar 29, 2016
Grant Date -
Oct 22, 2015
app pub date -
May 20, 2015
filing date -
Jun 5, 2012
priority date (Note) -
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Abstract
An improvement is achieved in the performance of a semiconductor device. A method of manufacturing the semiconductor device includes an exposure step of subjecting a resist film formed over a substrate to pattern exposure using EUV light reflected by the top surface of an EUV mask which is a reflection-type mask. In the exposure step, the EUV mask is held with the cleaned back surface thereof being in contact with a mask stage. In the EUV mask, the water repellency of the side surface thereof is higher than the water repellency of the top surface thereof. After the exposure step, the resist film subjected to the pattern exposure is developed to form a resist pattern.
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