Ion source and repeller structure

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United States of America Patent

PATENT NO 9299529
APP PUB NO 20120255490A1
SERIAL NO

13408579

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Abstract

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A repeller structure comprises a target member configured to be sputtered by a plasma to emit given ions, and provided with a through-hole penetrating between a sputterable surface and a reverse surface thereof, and a repeller body which supports the target member while being inserted in the through-hole of the target member, and has a repeller surface exposed on the side of the sputterable surface through the through-hole. The target member is made of a material selected from the group consisting of gallium oxide, gallium nitride, gallium phosphide, gallium arsenide and gallium fluoride.

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Patent Owner(s)

Patent OwnerAddress
NISSIN ION EQUIPMENT CO LTD29 HINOKIGAOKA MINAKUCHI-CHO KOKA-CITY SHIGA 528-0068

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tanjo, Masayasu Kyoto, JP 5 128

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