Polishing method

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United States of America Patent

PATENT NO 9299573
APP PUB NO 20150031205A1
SERIAL NO

14384729

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

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Patent Owner(s)

  • HITACHI CHEMICAL COMPANY, LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukasawa, Masato Hitachi, JP 29 326
Mishima, Kouji Hitachi, JP 8 51
Nishiyama, Masaya Hitachi, JP 10 230

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