Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
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United States of America Patent
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Mar 29, 2016
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app pub date -
Jan 29, 2014
filing date -
Jan 29, 2014
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask is exposed to a plasma treatment process to increase an etch resistance of the mask. The mask is patterned with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to exposing the mask to the plasma treatment process, the semiconductor wafer is plasma etched through the gaps in the mask to singulate the integrated circuits.
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