Semiconductor device with a field plate trench having a thick bottom dielectric

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9299793
SERIAL NO

14267760

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Disclosed is a power device, such as a power MOSFET, and methods for fabricating same. The device includes a field plate trench. The device further includes first and second trench dielectrics inside the field plate trench. The device also includes a field plate situated over the first trench dielectric and within the second trench dielectric. A combined thickness of the first and second trench dielectrics at a bottom of the field plate trench is greater than a sidewall thickness of the second trench dielectric.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INFINEON TECHNOLOGIES AMERICAS CORP.;INTERNATIONAL RECTIFIER CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Henson, Timothy D Torrance, US 24 124
Kelkar, Kapil Torrance, US 14 53
Radic, Ljubo Torrance, US 40 144

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Sep 29, 2027
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00