Light-emitting diode, light-emitting diode lamp, and illumination device
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United States of America Patent
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Mar 29, 2016
Grant Date -
Sep 26, 2013
app pub date -
Nov 30, 2011
filing date -
Dec 2, 2010
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InX1Ga1-X1)As (0≦X1≦1) and a barrier layer made of a compound semiconductor having a composition formula (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (AlX3Ga1-X3)Y1In1-Y1P (0≦X3≦1, 0
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