Method of treating wiring substrate and wiring substrate manufactured by the same

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United States of America Patent

PATENT NO 9301399
APP PUB NO 20140311778A1
SERIAL NO

14256252

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Abstract

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A method of treating a wiring substrate according to an embodiment includes, in a semi-additive process:

    (1) contacting the wiring substrate with a pre-etching treatment liquid composition containing a chloride ion, the wiring substrate containing a seed layer formed of an electroless copper and a wiring pattern formed of an electrolytic copper; and(2) continuously, etching the wiring substrate with an etching liquid composition containing a hydrogen peroxide, a sulfuric acid, a tetrazole, a chloride ion, a copper ion and a water.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI GAS CHEMICAL COMPANY INC5-2 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008324
RYOKO CHEMICAL CO LTD1-2-18 IWAMOTOCHO CHIYODA-KU TOKYO 101-0032

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hitotsugo, Akari Kanagawa, JP 1 1
Naito, Yukihide Kanagawa, JP 3 1
Suzuki, Tomoko Tokyo, JP 88 695
Tashiro, Norihumi Kanagawa, JP 1 1

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