Nonvolatile semiconductor memory device

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United States of America Patent

PATENT NO 9305637
APP PUB NO 20150070989A1
SERIAL NO

14194781

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Abstract

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A nonvolatile semiconductor memory device includes a memory cell array having nonvolatile memory cells in which one of multiple values is programmable therein by setting one of a plurality of threshold values therein and a control circuit that performs a writing operation on the memory cells. The writing operation performed by the control circuit includes a pre-programming verification operation to determine a threshold level of a memory cell in an erasure state, and a program operation in which a program voltage is selected from a plurality of program voltages on the basis of a determination result of the pre-programming verification operation.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arai, Fumitaka Mie, JP 234 5194
Funatsuki, Rieko Kanagawa, JP 20 26
Futatsuyama, Takuya Kanagawa, JP 132 1847

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