Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
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United States of America Patent
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Apr 5, 2016
Grant Date -
Oct 8, 2015
app pub date -
Jun 19, 2015
filing date -
Sep 20, 2012
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Abstract
According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness.
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