Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
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United States of America Patent
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Apr 5, 2016
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Jan 16, 2015
filing date -
Jun 27, 2013
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Abstract
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.
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