Etching method and etching apparatus of semiconductor wafer
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United States of America Patent
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Apr 5, 2016
Grant Date -
Dec 6, 2012
app pub date -
Aug 15, 2012
filing date -
May 15, 2008
priority date (Note) -
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Abstract
A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process.
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