Semiconductor material and method of production

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United States of America Patent

PATENT NO 9306111
APP PUB NO 20130269783A1
SERIAL NO

13988302

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Abstract

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A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.

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Patent Owner(s)

  • TDK CORPORATION;UNIVERSITE DU LUXEMBOURG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Berg, Dominik Wadern-Dagstuhl, DE 1 5
Dale, Phillip Luxembourg, LU 3 6
Redinger, Alex Luxembourg, LU 1 5
Siebentritt, Susanne Luxembourg, LU 5 12

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