Method for manufacturing semiconductor light emitting device
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United States of America Patent
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Apr 5, 2016
Issued Date -
N/A
app pub date -
Jun 30, 2015
filing date -
Aug 3, 2009
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.
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