Phase change memory stack with treated sidewalls
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United States of America Patent
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Apr 5, 2016
Grant Date -
Nov 5, 2015
app pub date -
Apr 30, 2014
filing date -
Apr 30, 2014
priority date (Note) -
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Abstract
Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.
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