Replacement materials processes for forming cross point memory

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United States of America Patent

PATENT NO 9306165
APP PUB NO 20150280118A1
SERIAL NO

14228104

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Abstract

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Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kau, Derchang Cupertino, US 70 1040
Lee, Jong-Won Boise, US 133 1689
Russell, Stephen W Boise, US 57 570
Spadini, Gianpaolo Los Gatos, US 47 872

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