Semiconductor lasers and etched-facet integrated devices having non-uniform trenches
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United States of America Patent
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Apr 5, 2016
Grant Date -
Aug 21, 2014
app pub date -
Feb 15, 2013
filing date -
Feb 15, 2013
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Abstract
An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows.
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